CHIPS R&D: Laser and Optical Parametric Amplifiers for Multiphoton Microscopy, GCPN 2.01-LP01

This procurement supports the NIST Nanoscale Device Characterization Division (NDCD) and the CHIPS Metrology Program's Grand Challenge to advance microelectronics manufacturing. NIST requires one laser and two Optical Parametric Amplifiers (OPAs) to generate ultrashort, intense infrared pulses. This system is critical for developing 3D thermal imaging metrology for semiconductor materials, providing lateral and depth resolution through nonlinear absorption.Technical Requirements:Laser: 1035 nm (+/- 8 nm) center frequency.Power and Energy: At least 40 W average power and 80 uJ pulse energy at 500 kHz.Pulse Duration: 300 fs or less.OPA 1: Signal tuning (1450-1900 nm) and Idler tuning (2200-3200 nm).OPA 2: Signal tuning (650-880 nm) and SHG output (320-505 nm).Delivery is required NLT 20 weeks ARO to Gaithersburg, MD.

Estimated value

$250K - $499K

Contract type

Unknown

• NAICS334516
• PSC334516