Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

See the attached SOW. All correspondence should reference ID# to ensure visibility. *PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.

• NAICS334413
• PSCAJ12

• SATPC0041564 Tab 04 4 SOW.pdf

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• Monica Wilson
  monica.d.wilson@nasa.gov